High Sensitivity Standard g-line Positive-tone Photoresist

High sensitivity broad-band,g-line positive-tone photoresist,optimized for

wide production of semiconductor

FEATURES

1) Achievement for high sensitivity and high throughput

2) Improvement for wet etching by high adhesion

3) Trust on delivery reference at wide field and industry

SAMPLE PROCESS CONDITIONS

Pre-bake: 100℃ 60sec.(DHP)

Exposure: g-line stepper and/or Contact Aligner

Developing: AZ300MIF 23℃ 60sec.Puddle

Rinse: DI-water 30sec.

Post-bake: 120℃ 120sec.(DHP)

Stripping: AZ Remover and/or O2 plasma-ashing